JPS6246061B2 - - Google Patents
Info
- Publication number
- JPS6246061B2 JPS6246061B2 JP10348283A JP10348283A JPS6246061B2 JP S6246061 B2 JPS6246061 B2 JP S6246061B2 JP 10348283 A JP10348283 A JP 10348283A JP 10348283 A JP10348283 A JP 10348283A JP S6246061 B2 JPS6246061 B2 JP S6246061B2
- Authority
- JP
- Japan
- Prior art keywords
- pad
- electrode pad
- main electrode
- auxiliary
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000679 solder Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910016338 Bi—Sn Inorganic materials 0.000 claims description 2
- 239000006023 eutectic alloy Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 16
- 238000007689 inspection Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10348283A JPS59228730A (ja) | 1983-06-09 | 1983-06-09 | 補助パツド付き電極パツド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10348283A JPS59228730A (ja) | 1983-06-09 | 1983-06-09 | 補助パツド付き電極パツド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59228730A JPS59228730A (ja) | 1984-12-22 |
| JPS6246061B2 true JPS6246061B2 (en]) | 1987-09-30 |
Family
ID=14355224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10348283A Granted JPS59228730A (ja) | 1983-06-09 | 1983-06-09 | 補助パツド付き電極パツド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59228730A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346352U (en]) * | 1989-09-13 | 1991-04-30 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554940A (en) * | 1994-07-05 | 1996-09-10 | Motorola, Inc. | Bumped semiconductor device and method for probing the same |
-
1983
- 1983-06-09 JP JP10348283A patent/JPS59228730A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346352U (en]) * | 1989-09-13 | 1991-04-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59228730A (ja) | 1984-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4750666A (en) | Method of fabricating gold bumps on IC's and power chips | |
| US5234149A (en) | Debondable metallic bonding method | |
| JP2555811B2 (ja) | 半導体チップのフリップチップ接合方法 | |
| US7019397B2 (en) | Semiconductor device, manufacturing method of semiconductor device, stack type semiconductor device, and manufacturing method of stack type semiconductor device | |
| JP3186941B2 (ja) | 半導体チップおよびマルチチップ半導体モジュール | |
| US5440239A (en) | Transferable solder bumps for interconnect and assembly of MCM substrates | |
| US5863812A (en) | Process for manufacturing a multi layer bumped semiconductor device | |
| JP3052074B2 (ja) | 集積回路チップのバーンインテスト基板及びこれを用いたノウングッドダイの製造方法 | |
| JPH06151701A (ja) | 半導体装置の製造方法 | |
| JPH06326111A (ja) | 半導体素子のバンプ形成方法 | |
| US5023697A (en) | Semiconductor device with copper wire ball bonding | |
| JPH0737948A (ja) | ダイ試験装置 | |
| JP2715793B2 (ja) | 半導体装置及びその製造方法 | |
| JPS6246061B2 (en]) | ||
| KR20020026854A (ko) | 반도체 장치 제조 방법 | |
| JP3468132B2 (ja) | 半導体装置の製造方法 | |
| US5626971A (en) | Thin film probe | |
| JPS6260836B2 (en]) | ||
| JPH1123656A (ja) | フリップチップｉｃの検査方法及び検査用基板 | |
| JPH0350736A (ja) | 半導体チップのバンプ製造方法 | |
| US3802065A (en) | Method and structure for mounting semiconductor chips | |
| JPH06268201A (ja) | Ｃｃｂバンプの形成方法 | |
| JPH04127547A (ja) | Ｌｓｉ実装構造体 | |
| JPH02181457A (ja) | バンプ電極を備える集積回路装置の試験方法 | |
| JP3128511B2 (ja) | アンパッケージ半導体ダイ試験用インターコネクトの形成方法 |